Specific Process Knowledge/Thermal Process/Furnace APOX

Feedback to this page: click here

Apox furnace (D1)

Apox furnace (D1): positioned in the III-V cleanroom area

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1075^oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.

Process knowledge

• Oxidation: look at the Oxidation page

Overview of the performance of the Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: With bubbler (water steam + O2)
Performance	Film thickness	Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range	Process Temperature	1075 oC
	Process pressure	1 atm
	Gas flows	N2: 0-10 slm O2: 0-10 slm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
	Substrate material allowed	Silicon wafers (new from the box)