Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions
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Revision as of 15:02, 15 January 2014
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Apox furnace (D1)
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.
This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.
Process knowledge
- Oxidation: look at the Oxidation page
Purpose |
Oxidation and annealing |
Oxidation:
|
---|---|---|
Performance | Film thickness |
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Process parameter range | Process Temperature |
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Process pressure |
| |
Gas flows |
| |
Substrates | Batch size |
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Substrate material allowed |
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