Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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Apox furnace (D1)

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 ^oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of the Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: With bubbler (water steam + O₂)
Performance	Film thickness	Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range	Process Temperature	1150 ^oC
	Process pressure	1 atm
	Gas flows	N₂: 0-10 slm O₂: 0-10 slm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

@@ Line 20: / Line 20: @@
 Oxidation and annealing
 |style="background:WhiteSmoke; color:black"|Oxidation:
-*Wet: With bubbler (water steam + N<sub>2</sub>)
+*Wet: With bubbler (water steam + O<sub>2</sub>)
 |-
 !style="background:silver; color:black" align="center"|Performance
@@ Line 38: / Line 38: @@
 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>: 5 sccm
+*N<sub>2</sub>: 0-10 slm
+*O<sub>2</sub>: 0-10 slm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates