Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions
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Revision as of 13:59, 14 January 2008
Etching of Aluminium
Etching of aluminium is done wet at Danchip. We have two different solutions:
- HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} POFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} 1:2 at 50 oC
- Pre-mixed etch solution: PES 77-19-04 at 20 oC
Comparing the two solutions
Aluminium Etch 1 | Aluminium Etch 2 | |
---|---|---|
General description |
Etch of pure aluminium |
Etch of aluminium + 1.5% Si |
Chemical solution | HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2} O:HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _3} POFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4} 1:2 | PES 77-19-04 |
Process temperature | 50 oC | 20 oC |
Possible masking materials: |
Photoresist (1.5 µm AZ5214E) |
Photoresist (1.5 µm AZ5214E) |
Etch rate |
~100 nm/min (Pure Al) |
~60(??) nm/min |
Batch size |
1-25 wafers at a time |
1-25 wafer at a time |
Size of substrate |
4" wafers |
4" wafers |
Allowed materials |
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