Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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==Apox furnace (D1)==
==Apox furnace (D1)==
[[Image:APOX.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]]
[[Image:APOX.JPG|thumb|300x300px|Apox furnace (D1): positioned in the III-V cleanroom area]]


The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks, depending on how thick an apox layer that is required.   
The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.   


This furnace is positioned in III-V cleanroom. Only Danchip employees are allowed to use the furnace.
This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.


==Process knowledge==
==Process knowledge==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page


==Overview of the performance of Apox furnace and some process related parameters==
==Overview of the performance of the Apox furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
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|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Wet SiO<sub>2</sub>: Thicker than > 5 µm (APOX layers)
*Wet oxide: Thicker than > 5 µm (APOX layers)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range

Revision as of 11:58, 14 January 2014

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Apox furnace (D1)

Apox furnace (D1): positioned in the III-V cleanroom area

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 oC. Running a batch of apox wafers (oxide thickness > 5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in the III-V cleanroom area. Only Danchip employees are allowed to operate the furnace.

Process knowledge

Overview of the performance of the Apox furnace and some process related parameters

Purpose

Oxidation and annealing

Oxidation:
  • Wet: With bubbler (water steam + N2)
Performance Film thickness
  • Wet oxide: Thicker than > 5 µm (APOX layers)
Process parameter range Process Temperature
  • 1150 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
Substrates Batch size
  • 1-200 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box)
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