Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

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==Overview of the performance of Apox furnace and some process related parameters==
==Overview of the performance of Apox furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="0"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Oxidation and annealing  
|style="background:LightGrey; color:black"|
Oxidation and annealing  
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
*Wet: with bubbler (water steam + N<sub>2</sub>)
*Wet: With bubbler (water steam + N<sub>2</sub>)
|-
|-
!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Wet SiO<sub>2</sub>: used for layer thickness >5µm
*Wet SiO<sub>2</sub>: Thicker than > 5 µm (APOX layers)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
Line 40: Line 41:
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub>:5 sccm
*N<sub>2</sub>: 5 sccm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates

Revision as of 11:54, 14 January 2014

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Apox furnace (D1)

D1 Furnace Apox: positioned in cleanroom ?

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 oC. Running a batch of apox wafers (oxide>5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in III-V cleanroom. Only Danchip employees are allowed to use the furnace.

Process knowledge

Overview of the performance of Apox furnace and some process related parameters

Purpose

Oxidation and annealing

Oxidation:
  • Wet: With bubbler (water steam + N2)
Performance Film thickness
  • Wet SiO2: Thicker than > 5 µm (APOX layers)
Process parameter range Process Temperature
  • 1150 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
Substrates Batch size
  • 1-200 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box)
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