Specific Process Knowledge/Thermal Process/Furnace APOX: Difference between revisions

Revision as of 11:50, 14 January 2014

Feedback to this page: click here

Apox furnace (D1)

D1 Furnace Apox: positioned in cleanroom ?

The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 ^oC. Running a batch of apox wafers (oxide>5µm) can take several weeks, depending on how thick an apox layer that is required.

This furnace is positioned in III-V cleanroom. Only Danchip employees are allowed to use the furnace.

Process knowledge

Oxidation: look at the Oxidation page

Overview of the performance of Apox furnace and some process related parameters

Purpose	Oxidation and annealing	Oxidation: Wet: with bubbler (water steam + N₂)
Performance	Film thickness	Wet SiO₂: used for layer thickness >5µm
Process parameter range	Process Temperature	1150 ^oC
	Process pressure	1 atm
	Gas flows	N₂:5 sccm
Substrates	Batch size	1-200 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box)

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]'''
+'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_APOX click here]'''
 ==Apox furnace (D1)==
 [[Image:APOX.JPG|thumb|300x300px|D1 Furnace Apox: positioned in cleanroom ?]]
-The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated production of apox wafers which is a very thick thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks.
+The APOX furnace (D1) is a Tempress horizontal furnace for oxidation silicon wafers. This furnace is dedicated for oxidation of new and clean Si wafers to form apox layers which is a very thick wet thermal oxide grown at 1150 <sup>o</sup>C. Running a batch of apox wafers (oxide>5µm) can take several weeks, depending on how thick an apox layer that is required.
-This furnace is positioned in III-V cleanroom. The furnaces are the cleanest process chambers in the cleanroom. Only new wafers from the box enters this furnace.
+This furnace is positioned in III-V cleanroom. Only Danchip employees are allowed to use the furnace.
 ==Process knowledge==