Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions
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==Overview of the performance of the Noble Furnace== | ==Overview of the performance of the Noble Furnace== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="2" | ||
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
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Oxidation: | Oxidation: | ||
*Dry | *Dry | ||
*Wet (with bubbler) | *Wet (with bubbler. water steam + N<sub>2</sub>) | ||
Annealing: | Annealing: | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||
*Argon | *Argon | ||
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|style="background:LightGrey; color:black"|Gasses on the system | |style="background:LightGrey; color:black"|Gasses on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub>:0-5 SLM | *N<sub>2</sub>: 0-5 SLM | ||
*O<sub>2</sub>: 0-5 SLM | *O<sub>2</sub>: 0-5 SLM | ||
*Argon: 0-7 SLM | *Argon: 0-7 SLM | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*1-25 100 mm wafers (or 50 mm wafers) per run | *1-25 100 mm wafers (or 50 mm wafers) per run | ||
*A number of smaller samples (placed on a Si carrier wafer) | |||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||