Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions
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==Overview of the performance of the Noble Furnace== | ==Overview of the performance of the Noble Furnace== | ||
{| border="2" cellspacing="0" cellpadding=" | {| border="2" cellspacing="0" cellpadding="2" | ||
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
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Oxidation: | Oxidation: | ||
*Dry | *Dry | ||
*Wet (with bubbler) | *Wet (with bubbler. water steam + N<sub>2</sub>) | ||
Annealing: | Annealing: | ||
*N<sub>2</sub> | *N<sub>2</sub> | ||
*Argon | *Argon | ||
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|style="background:LightGrey; color:black"|Gasses on the system | |style="background:LightGrey; color:black"|Gasses on the system | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*N<sub>2</sub>:0-5 SLM | *N<sub>2</sub>: 0-5 SLM | ||
*O<sub>2</sub>: 0-5 SLM | *O<sub>2</sub>: 0-5 SLM | ||
*Argon: 0-7 SLM | *Argon: 0-7 SLM | ||
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*1-25 100 mm wafers (or 50 mm wafers) per run | *1-25 100 mm wafers (or 50 mm wafers) per run | ||
*A number of smaller samples (placed on a Si carrier wafer) | |||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed |
Revision as of 11:40, 14 January 2014
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Noble furnace
The Noble Furnace is mostly used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. Recently (Autumn 2013) a bubler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the furnace is 1000 oC.
In the Noble Furnaces more dirty samples with metals and some specific polymers are allowed. Different sample holder are available for wafers and smaller samples.
The furnace is located in service area 3.
The user manual, technical information and contact information can be found in LabManager:
Overview of the performance of the Noble Furnace
Purpose |
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Oxidation:
Annealing:
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Process parameter range | Process Temperature |
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Process pressure |
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Gasses on the system |
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Substrates | Batch size |
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Substrate material allowed |
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