Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|Oxide growth, annealing
*Oxidation
*Annealing
|style="background:WhiteSmoke; color:black"|
Oxidation:
*Dry
*Wet (with bubbler)
Annealing:
*N<sub>2</sub>:
*Argon
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*20-1000 <sup>o</sup>C
*Up to 1000 <sup>o</sup>C
|-
|-
|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-25 4" wafer (or 2" wafers) per run
*1-25 100 mm wafers (or 50 mm wafers) per run
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon samples (new from the box or RCA cleaned)
*Contact [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk] before annealing or oxidising metals in the furnace
*Silicon samples with metals
*Silicon sample with polymers (only approved materials)
|-
|-
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Revision as of 11:14, 14 January 2014

Noble furnace

Feedback to this page: [mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20 http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]

The Noble Furnace is mostly used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. Recently (Autumn 2013) a bubler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the Noble furnace is 1000 oC.

In the Noble Furnaces more dirty samples with metal are allowed in the furnace. Different sample holder are available for wafers and smaller samples.

The furnace is located in in service area 3.

A1 Bor Drive-in furnace. Positioned in cleanroom 2


The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose
  • Oxidation
  • Annealing

Oxidation:

  • Dry
  • Wet (with bubbler)

Annealing:

  • N2:
  • Argon
Process parameter range Process Temperature
  • Up to 1000 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2:0-5 SLM
  • O2: 0-5 SLM
  • Argon: 0-7 SLM
Substrates Batch size
  • 1-25 100 mm wafers (or 50 mm wafers) per run
Substrate material allowed
  • Silicon samples (new from the box or RCA cleaned)
  • Silicon samples with metals
  • Silicon sample with polymers (only approved materials)
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