Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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==Noble furnace==
==Noble furnace==
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The Noble Furnace is mostlys used for annealing and oxidation of different samples. Also more dirty samples with metal are allowed in the furnace.  
The Noble Furnace is mostly used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. Recently (Autumn 2013) a bubler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the Noble furnace is 1000 <sup>o</sup>C.
 
The maximum temperature of the Noble furnace is 1000 <sup>o</sup>C. The gas connections are N<sub>2</sub>, O<sub>2</sub> and argon. Recently (Autumn 2013) a bubler for wet oxidaton has also been installed on the furnace.  


In the Noble Furnaces more dirty samples with metal are allowed in the furnace. Different sample holder are available for wafers and smaller samples.


The furnace is located in in service area 3.  
The furnace is located in in service area 3.  
This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.


[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]

Revision as of 10:04, 14 January 2014

Noble furnace

Feedback to this page: [mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20 http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]

The Noble Furnace is mostly used for annealing and oxidation of different samples. Annealing can be done in a nitrogen or argon atmosphere. Recently (Autumn 2013) a bubler has also been installed in the furnace, so it is possible to do both wet and dry oxidations. The maximum temperature of the Noble furnace is 1000 oC.

In the Noble Furnaces more dirty samples with metal are allowed in the furnace. Different sample holder are available for wafers and smaller samples.

The furnace is located in in service area 3.

A1 Bor Drive-in furnace. Positioned in cleanroom 2


The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose Oxide growth, annealing
Process parameter range Process Temperature
  • 20-1000 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2:0-5 SLM
  • O2: 0-5 SLM
  • Argon: 0-7 SLM
Substrates Batch size
  • 1-25 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • Contact furnace@danchip.dtu.dk before annealing or oxidising metals in the furnace