Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

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==Noble furnace==
==Noble furnace==
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''
'''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace_Noble click here]'''
The Noble Furnace is mostlys used for annealing and oxidation of different samples. Also more dirty samples with metal are allowed in the furnace.
The maximum temperature of the Noble furnace is 1000 <sup>o</sup>C. The gas connections are N<sub>2</sub>, O<sub>2</sub> and argon. Recently (Autumn 2013) a bubler for wet oxidaton has also been installed on the furnace.
The furnace is located in in service area 3.




This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.
This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.
The Noble furnace is located in service room 3.
 


[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
[[Image:Noble.JPG|thumb|300x300px|A1 Bor Drive-in furnace. Positioned in cleanroom 2]]
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub>:0-5 sccm
*N<sub>2</sub>:0-5 SLM
*O<sub>2</sub>: 0-5 sccm
*O<sub>2</sub>: 0-5 SLM
*Argon: 0-7 SLM
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates

Revision as of 09:47, 14 January 2014

Noble furnace

Feedback to this page: click here

The Noble Furnace is mostlys used for annealing and oxidation of different samples. Also more dirty samples with metal are allowed in the furnace.

The maximum temperature of the Noble furnace is 1000 oC. The gas connections are N2, O2 and argon. Recently (Autumn 2013) a bubler for wet oxidaton has also been installed on the furnace.


The furnace is located in in service area 3.



This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius.


A1 Bor Drive-in furnace. Positioned in cleanroom 2


The user manual, technical information and contact information can be found in LabManager:

Noble furnace

Overview of the performance of the Noble Furnace

Purpose Oxide growth, annealing
Process parameter range Process Temperature
  • 20-1000 oC
Process pressure
  • 1 atm
Gasses on the system
  • N2:0-5 SLM
  • O2: 0-5 SLM
  • Argon: 0-7 SLM
Substrates Batch size
  • 1-25 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • Contact furnace@danchip.dtu.dk before annealing or oxidising metals in the furnace
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