Specific Process Knowledge/Characterization/Thickness Measurer: Difference between revisions
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==Process knowledge== | ==Process knowledge== | ||
==Quality Control - Recipe Parameters and Limits== | |||
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|bgcolor="#98FB98" |'''Quality Control (QC) for the Thickness measurer''' | |||
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*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1831&mach=198 The QC procedure]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=2062 The newest QC data]<br> | |||
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! QC Recipe: | |||
! Wet1050 | |||
! Dry1050 | |||
|- | |||
| H<sub>2</sub> flow | |||
|3 sccm | |||
|0 sccm | |||
|- | |||
|O<sub>2</sub> flow | |||
|2 sccm | |||
|5 sccm | |||
|- | |||
|Temperature | |||
|1050 C | |||
|1050 C | |||
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|Oxidation time | |||
|30 min | |||
|100 min | |||
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!QC limits | |||
|Thickness | |||
|Non-uniformity (both over a single wafer | |||
and over the boat) | |||
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!Dry1050 | |||
|110-116 nm | |||
|3 % | |||
|- | |||
!Wet1050 | |||
|305-321 nm | |||
|5 % | |||
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Revision as of 10:47, 13 January 2014
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Thickness measurer
The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.
Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.
The user manual, technical information and contact information can be found in LabManager:
Process knowledge
Quality Control - Recipe Parameters and Limits
| Quality Control (QC) for the Thickness measurer | ||||||||||||||||||||||||||
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Purpose |
Measurer the thinkness of silicon wafer |
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Performance |
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Process parameter range |
Process Temperature |
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| Process pressure |
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| Gasses on the system | ||
| Substrates | Batch size |
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| Substrate materials allowed |
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This is a micrometer-screw.
It measures with an accurracy within a few µm. The range is from a few µm up to 5mm. Measure the wafer in the box next to the meter. If this is ok, then other wafers can be measured. There is a calibration device by the DEKTAK. It is calibrated at 750µm.