Jump to content

Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions

← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
Line 25: Line 25:
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
*Oxidation of Si wafers
*Oxidation of Si wafers
*Annealing of processed wafer, eg. bonded wafers
*Annealing of processed wafers, eg. bonded wafers from EVG NIL
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
*Dry
*Dry
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/C3_Anneal-bond_furnace"