Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions
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==Overview of the performance of Aluminium Anneal furnace and some process related parameters== | ==Overview of the performance of Aluminium Anneal furnace and some process related parameters== | ||
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
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*Annealing of wafers with aluminium | *Annealing of wafers with aluminium | ||
*Oxidation of wafers with aluminium | *Oxidation of wafers with aluminium | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*1-30 100 mm wafers (or 50 mm wafers) | *1-30 100 mm wafers (or 50 mm wafers) | ||
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| style="background:LightGrey; color:black"|Substrate | | style="background:LightGrey; color:black"|Substrate materiasl allowed | ||
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*Silicon wafers with alluminium. | *Silicon wafers with alluminium. | ||
*Wafers are allowed enter the furnace after | *Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone | ||
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