Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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*1-30 100 mm or 150 mm wafers (or 50 mm wafers) per run | *1-30 100 mm or 150 mm wafers (or 50 mm wafers) per run | ||
|- | |- | ||
| style="background:LightGrey; color:black"|Substrate | | style="background:LightGrey; color:black"|Substrate materials allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers (RCA cleaned) | *Silicon wafers (RCA cleaned) | ||