Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide

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Anneal-oxide furnace (C1)

Anneal-oxide furnace (C1). Positioned in cleanroom 2

The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.

The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. All wafers have to be RCA cleaned before they enter the furnace, the only exceptions are wafers from PECVD2 and the LPCVD furnaces.

The user manual, technical information and contact information can be found in LabManager:

Anneal-oxide furnace (C1)

Process knowledge

• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose	Oxidation of 100 mm and 150 mm wafers Annealing of 100 mm and 150 mm wafers	Oxidation: Dry Wet: with bubbler (water steam + N2)
Performance	Film thickness	Dry SiO2: 50Å to ~2000Å (it takes too long to grow a thicker oxide) Wet SiO2: 50Å to ~5µm (it takes too long to grow a thicker oxide)
Process parameter range	Process Temperature	800-1150 oC
	Process pressure	1 atm
	Gas flows	N2: 5 sccm O2: 5 sccm
Substrates	Batch size	1-30 100 mm or 150 mm wafers (or 50 mm wafers) per run
	Substrate material allowed	Silicon wafers (RCA cleaned) Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Wafers from the LPCVD furnaces Wafers from PECVD2