Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

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==Anneal-oxide furnace (C1)==
==Anneal-oxide furnace (C1)==
[[Image:C1.JPG|thumb|300x300px|C1 Anneal-oxide furnace. Positioned in cleanroom 2]]
[[Image:C1.JPG|thumb|300x300px|Anneal-oxide furnace (C1). Positioned in cleanroom 2]]


The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.
The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.


The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. All wafers have to be RCA cleaned before they enter the furnace, the only exception is wafer from PECVD2 if these have been RCA cleaned before they enter the PECVD.
The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. All wafers have to be RCA cleaned before they enter the furnace, the only exceptions are wafers from PECVD2 and the LPCVD furnaces.


'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''
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==Overview of the performance of Anneal Oxide furnace and some process related parameters==
==Overview of the performance of Anneal Oxide furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="0"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
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|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Annealing: N<sub>2</sub>: 5 sccm
N<sub>2</sub>: 5 sccm
*Dry oxidation: O<sub>2</sub>: 5 sccm
O<sub>2</sub>: 5 sccm
*Wet oxidation: N<sub>2</sub>: 5 sccm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 100 mm or 150 wafers (or 50 mm wafers) per run
*1-30 100 mm or 150 mm wafers (or 50 mm wafers) per run
|-
|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed
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*Silicon wafers (RCA cleaned)
*Silicon wafers (RCA cleaned)
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Quartz wafers (RCA cleaned)
*Wafers from the LPCVD furnaces
*From PECVD2 directly (wafer have to be RCA cleaned before entering PECVD2)
*Wafers from PECVD2
|-  
|-  
|}
|}

Revision as of 14:47, 10 January 2014

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Anneal-oxide furnace (C1)

Anneal-oxide furnace (C1). Positioned in cleanroom 2

The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.

The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. All wafers have to be RCA cleaned before they enter the furnace, the only exceptions are wafers from PECVD2 and the LPCVD furnaces.

The user manual, technical information and contact information can be found in LabManager:

Anneal-oxide furnace (C1)

Process knowledge


Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose
  • Oxidation of 100 mm and 150 mm wafers
  • Annealing of 100 mm and 150 mm wafers
 Oxidation:
  • Dry
  • Wet: with bubbler (water steam + N2)
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (it takes too long to grow a thicker oxide)
  • Wet SiO2: 50Å to ~5µm (it takes too long to grow a thicker oxide)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gas flows

N2: 5 sccm O2: 5 sccm

Substrates Batch size
  • 1-30 100 mm or 150 mm wafers (or 50 mm wafers) per run
Substrate material allowed
  • Silicon wafers (RCA cleaned)
  • Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Wafers from the LPCVD furnaces
  • Wafers from PECVD2
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