Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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|Thickness
|Thickness
|Non-uniformity (both over a single wafer
|Non-uniformity (both over a single wafer
and over the boat)
and over the boat)
|-
|-
!Dry1050
!Dry1050

Revision as of 13:27, 10 January 2014

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Phosphorus Drive-in furnace (A3)

Phosphorus Drive-in furnace (A3). Positioned in cleanroom 2

The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and for drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Pre-dep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.

The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Phosphorus Drive-in furnace (A3)

Process knowledge

Quality Control - Recipe Parameters and Limits

Quality Control (QC) for the processes "Wet1050" and "Dry1050"
QC Recipe: Wet1050 Dry1050
H2 flow 3 sccm 0 sccm
O2 flow 2 sccm 5 sccm
Temperature 1050 C 1050 C
Oxidation time 30 min 100 min
QC limits Thickness Non-uniformity (both over a single wafer

and over the boat)

Dry1050 110-116 nm 3 %
Wet1050 305-321 nm 5 %

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose
  • Drive-in of phosphorous
  • Oxidation of silicon
  • Oxidation of phosphorous phase layers
  • Annealing of the oxide.
 Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide)
  • Wet SiO2: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • O2, N2 and H2
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned)
  • Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace
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