Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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!style="background:silver; color:black;" align="center"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Annealing  
|style="background:LightGrey; color:black"|Annealing  
|style="background:WhiteSmoke; color:black"|Annealing of wafers containing aluminium.
|style="background:WhiteSmoke; color:black"|
*Annealing of wafers with aluminium
*Oxidation of wafers with aluminium
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-30 4" wafer (or 2" wafers)  
*1-30 100 mm wafers (or 50 mm wafers)  
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|-
| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate material allowed

Revision as of 15:02, 9 January 2014

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Aluminium Anneal furnace (C4)

C4 Aluminium Anneal furnace. Positioned in cleanroom 2

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing of silicon wafers with aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contain aluminium. Check the cross contamination information in LabManager for more information.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose Annealing
  • Annealing of wafers with aluminium
  • Oxidation of wafers with aluminium
Performance Film thickness
Process parameter range Process Temperature
  • 400-500 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 5 sccm
  • O2: 5 sccm
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers)
Substrate material allowed
  • Silicon wafers with alluminium.
  • Wafers are allowed enter the furnace after Al lift-off or after Al etch and resist strip in acetone
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