Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | *Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Quartz wafers (RCA cleaned) | *Quartz wafers (RCA cleaned) | ||
*From bonding in EVG NIL directly (assuming they | *From bonding in EVG NIL directly (assuming they were clean and not contain any metal when entering EVG NIL) | ||
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