Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

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 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*Annealing: N<sub>2</sub>:5 sccm
+*Annealing: N<sub>2</sub>: 5 sccm
-*Dry oxidation: O<sub>2</sub>:5 sccm
+*Dry oxidation: O<sub>2</sub>: 5 sccm
-*Wet oxidation: N<sub>2</sub>:5 sccm
+*Wet oxidation: N<sub>2</sub>: 5 sccm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" and 6" wafer (or 2" wafers) per run
+*1-30 100 mm or 150 wafers (or 50 mm wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
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 *Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
 *Quartz wafers (RCA cleaned)
-*From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
+*From PECVD2 directly (wafer have to be RCA cleaned before entering PECVD2)
 |-
 |}