Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

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 [[Image:C1.JPG|thumb|300x300px|C1 Anneal-oxide furnace. Positioned in cleanroom 2]]
-The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD1). Both 100 mm and 150 mm wafers can be processed in the furnace.
+The Anneal-oxide furnace (C1) is a Tempress horizontal furnace for oxidation and annealing of silicon wafers, e.g with layers of oxide, polysilicon or BPSG glass (from PECVD2). Both 100 mm and 150 mm wafers can be processed in the furnace.
-The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to process wafers that comes directly from PECVD1, all other wafers have to the RCA cleaned. Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart].
+The Anneal-oxide furnace is the upper furnace tube in the furnace C-stack positioned in cleanroom 2. All wafers have to be RCA cleaned before they enter the furnace, the only exception is wafer from PECVD2 if these have been RCA cleaned before they enter the PECVD.
 '''The user manual, technical information and contact information can be found in LabManager:'''