Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions
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|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: 50Å to ~2000Å (takes too long to | *Dry SiO<sub>2</sub>: 50Å to ~2000Å (it takes too long to grow a thicker oxide) | ||
*Wet SiO<sub>2</sub>: 50Å to ~5µm ( | *Wet SiO<sub>2</sub>: 50Å to ~5µm (it takes too long to grow a thicker oxide) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Silicon wafers ( | *Silicon wafers (RCA cleaned) | ||
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | *Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) | ||
*Quartz wafers (RCA cleaned) | *Quartz wafers (RCA cleaned) | ||