Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

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Phosphorus Predep furnace (A4)

A4 Phosphor Pre-dep furnace. Positioned in cleanroom 2

The Phosphorus Predep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl₃.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the Gate Oxide furnace (C2) are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart.

The user manual, technical information and contact information can be found in LabManager:

Phosphorus Predep furnace (A4)

Process knowledge

Dope with Phosphorus

Overview of the performance of the Phosphor pre-dep furnace and some process related parameters

Purpose	Doping of Phosphor
Performance		Look at Process knowladge
Process parameter range	Process Temperature	900-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	POCl₃, N₂
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (RCA cleaned)

@@ Line 50: / Line 50: @@
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
-*Silicon wafers (new from the box or RCA cleaned)
+*Silicon wafers (RCA cleaned)
-*In doubt: look at the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart] or please send a mail to [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk]
 |-
 |}