Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation of silicon and annealing of the oxide.
+|style="background:LightGrey; color:black"|
+*Drive-in of phosphorous
+*Oxidation of silicon
+*Oxidation of phosphorous phase layer
+*Annealing of the oxide.
 |style="background:WhiteSmoke; color:black"|Oxidation:
 *Dry
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 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
+*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
-*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
+*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
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 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" wafer (or 2" wafers) per run
+*1-30 100 mm wafer (or 50 mm wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
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 *Silicon wafers (RCA cleaned)
 *From A4 furnace directly (e.g. incl. Predep HF)
-*In doubt: look at the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination information in LabManager] or please send a mail to [mailto:thinfilm@danchip.dtu.dk thinfilm@danchip.dtu.dk].
 |-
 |}