Jump to content

Specific Process Knowledge/Back-end processing/Laser Micromachining Tool: Difference between revisions

Chasil (talk | contribs)
Chasil (talk | contribs)
Line 138: Line 138:
| Easily break silicon in cristal plan. Depth of the groove : 25µm  
| Easily break silicon in cristal plan. Depth of the groove : 25µm  
|- style="background:LightGray" valign="top"
|- style="background:LightGray" valign="top"
| Silicon 525µm with SiO2 (150nm to 1,2µm)
| Silicon 525µm with Si3N4 (150nm to 1,2µm)
| Red (1064nm/255mm)
| Red (1064nm/255mm)
| 200 kHz
| 200 kHz
Line 152: Line 152:
| Samples can easily be removed with a soft mecanical pressure. A layer of resist (AZMIR701) can be deposited on the top without influence the dicing. However, the burnt resist may induce cracks that can propagate, under the influence of the number of iteration. The blue tape may sticks to the wafer a the end of the process.   
| Samples can easily be removed with a soft mecanical pressure. A layer of resist (AZMIR701) can be deposited on the top without influence the dicing. However, the burnt resist may induce cracks that can propagate, under the influence of the number of iteration. The blue tape may sticks to the wafer a the end of the process.   
|-
|-
|- style="background:LightGray" valign="top"
| Ni (320µm)
| Green(532nm/255mm)
| 200 kHz
| 100%
| 0,64 W
| 300 mm/s
| 3 burst
| none
| 4320 it.
| 1
| N/A
| [[media:Cutting_Ni_320µm.xls|Cutting Ni 320µm]]
| Cutting through only blue tape left
|-
|- style="background:LightGray" valign="top"
| Pyrex 1000µm
| Red(1064nm/255mm)
| 200 kHz
| 100%
| 2,8 W
| 1000 mm/s
| 1 burst
| none
| 99 it.
| 13 
| 20 µm
| [[media:Cutting_Pyrex_microfluidic_hole_1064nm_255mm.xls|Cutting Pyrex 1000µm for microfluidic hole parameters]]
| Increase/decrease the number of iteration to increase/decrease the width of the hole. [[file:pyrex_10um_hole_chanel.jpg|Microscope view of the chanel  ]]
|-
|}
|}