Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Dry | *Dry oxide: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) | ||
*Wet | *Wet oxide>: 50 Å to ~3 µm (it takes too long to grow a thicker oxide) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*1-30 | *1-30 100 nm wafer (or 50 nm wafers) per run | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed | ||
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*1-12 | *1-12 100 nm wafers (or 50 nm wafers) per run | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | | style="background:LightGrey; color:black"|Substrate material allowed |
Revision as of 08:46, 7 January 2014
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Boron Drive-in + Pre-dep furnace (A1)
The Boron Drive-in + Pre-dep furnane (A1) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a pre-deposition and oxidation of the boron phase layer. Boron pre-deposition takes place in the same furnace. The Boron Drive-in furnace can also be used for drive-in of boron which has been ion implanted.
Boron source wafers are used as the doping source for the pre-dep process to dope Si wafers with boron to make conductive structues, etch stop layers etc. There are only a few source wafers, i.e. it is not possible to make an entire batch of 30 wafers, but both sides of the doping source wafers are available for pre-deposition. It is necessary to activate the source wafers before use, by heating them for 1 hour at the temperature needed during the pre-deposition (but not lover than 1050 degrees Celsius). During the process a boron phase layer is created on the device wafers. It can be removed in HF if the wafers are oxidised in the A1 Bor Drive-in + Pre-dep furnace after the pre-deposition.
The Boron Drive-in + Pre-dep furnace is the top furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.
The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:
Boron Drive-in + Pre-dep furnace (A1)
Process knowledge
- Boron drive-in: look at the Dope with Boron page
- Oxidation: look at the Oxidation page
- Annealing: look at the Annealing page
- Boron doping: look at the Dope with Boron page.
Quality Control - Parameters and Limits
Quality Controle (QC) for the processes "Wet1050" and "Dry1050" | ||||||||||||||||||||||||||
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Purpose |
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Oxidation:
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Performance | Film thickness |
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Process parameter range | Process Temperature |
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Process pressure |
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Gasses on the system |
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Substrates | Batch size |
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Substrate material allowed |
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Purpose | Doping of boron | |
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Performance |
Look at the process knowlege | |
Process parameter range | Process Temperature |
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Process pressure |
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Gasses on the system |
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Substrates | Batch size |
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Substrate material allowed |
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