Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 97: | Line 97: | ||
! QC Recipe: | ! QC Recipe: | ||
! colspan="4" | | ! colspan="4" | Deepetch (50 µm trench) | ||
|- | |- | ||
! colspan="2" align="center"| Common parameters | ! colspan="2" align="center"| Common parameters | ||
| Line 109: | Line 109: | ||
|- | |- | ||
! Temperature | ! Temperature | ||
| | | 20<sup>o</sup>C | ||
! SF<sub>6</sub> Flow | ! SF<sub>6</sub> Flow | ||
| | | 230 sccm | ||
| 0 sccm | | 0 sccm | ||
|- | |- | ||
! No. of cycles | ! No. of cycles | ||
| | | 250 | ||
! O<sub>2</sub> Flow | ! O<sub>2</sub> Flow | ||
| | | 23 sccm | ||
| 0 sccm | | 0 sccm | ||
|- | |- | ||
! Process time | ! Process time | ||
| | | 54:10 mins | ||
! C<sub>4</sub>F<sub>8</sub> Flow | ! C<sub>4</sub>F<sub>8</sub> Flow | ||
| 0 sccm | | 0 sccm | ||
| Line 133: | Line 133: | ||
|- | |- | ||
! APC setting | ! APC setting | ||
| | | 87.7 % | ||
! RF Platen | ! RF Platen | ||
| | | 19 W | ||
| 0 W | | 0 W | ||
|- | |- | ||
| Line 141: | Line 141: | ||
| | | | ||
! Cycle time | ! Cycle time | ||
| | | 8 s | ||
| 5 s | | 5 s | ||
|} | |} | ||