Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
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! QC Recipe: | |||
! colspan="4" |Shallolr (2 µm trench) | |||
|- | |||
! colspan="2" align="center"| Common parameters | |||
! colspan="3" align="center"| Multiplexed parameters | |||
|- | |||
! Parameter | |||
! Setting | |||
! Parameter | |||
! Etch | |||
! Passivation | |||
|- | |||
! Temperature | |||
| 10<sup>o</sup>C | |||
! SF<sub>6</sub> Flow | |||
| 260 sccm | |||
| 0 sccm | |||
|- | |||
! No. of cycles | |||
| 31 | |||
! O<sub>2</sub> Flow | |||
| 26 sccm | |||
| 0 sccm | |||
|- | |||
! Process time | |||
| 5:56 mins | |||
! C<sub>4</sub>F<sub>8</sub> Flow | |||
| 0 sccm | |||
| 120 sccm | |||
|- | |||
! APC mode | |||
| manual | |||
! RF coil | |||
| 2800 W | |||
| 1000 W | |||
|- | |||
! APC setting | |||
| 86.8 % | |||
! RF Platen | |||
| 16 W | |||
| 0 W | |||
|- | |||
! | |||
| | |||
! Cycle time | |||
| 6.5 s | |||
| 5 s | |||
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!QC limits | |||
! ASE | |||
|- | |||
|Etch rate in Si | |||
|0.2 - 0.6 µm/min | |||
|- | |||
|Non-uniformity | |||
|2 - 5 % | |||
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