Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions

@@ Line 28: / Line 28: @@
 ! QC Recipe:
-! OH_POLYA
+! The shallolr recipe
-|-
-| SF<sub>6</sub> flow
-|32 sccm
 |-
-|O<sub>2</sub> flow
+! colspan="2" align="center"| Common parameters
-|8 sccm
+! colspan="3" align="center"| Multiplexed parameters
-|-
-|Pressure
-|80 mTorr
 |-
-|RF-power
+! Parameter
-|30 W
+! Setting
+! Parameter
+! Etch
+! Passivation
 |-
-|Etch Load
+! Temperature
-|50%
+| 10<sup>o</sup>C
+! SF<sub>6</sub> Flow
+| 260 sccm
+| 0 sccm
 |-
+! No. of cycles
+| 31
+! O<sub>2</sub> Flow
+| 26 sccm
+| 0 sccm
+|-
+! Process time
+| 5:56 mins
+! C<sub>4</sub>F<sub>8</sub> Flow
+| 0 sccm
+| 120 sccm
+|-
+! APC mode
+| manual
+! RF coil
+| 2800 W
+| 1000 W
+|-
+! APC setting
+| 86.8 %
+! RF Platen
+| 16 W
+| 0 W
+|-
+!
+|
+! Cycle time
+| 6.5 s
+| 5 s
 |}
 | align="center" valign="top"|
 {| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
@@ Line 64: / Line 94: @@
 |}
 |}
 == Recipes on the ASE ==