Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
| Line 169: | Line 169: | ||
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px" | {| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px" | ||
!QC limits | !QC limits | ||
! | !DRIE-Pegasus | ||
|- | |- | ||
|Etch rate in Si | |Etch rate in Si | ||
|0.2 - 0.6 µm/min | |0.2 - 0.6 µm/min | ||
|- | |- | ||
|Non-uniformity | |Non-uniformity | ||
|2 - 5 % | |2 - 5 % | ||
|- | |- | ||