Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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*Wet oxide with H<sub>2</sub>O in a bubbler can be grown in furnaces: C1, C3, D1, nobel. | *Wet oxide with H<sub>2</sub>O in a bubbler can be grown in furnaces: C1, C3, D1, nobel. | ||
[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] | == Choose an equipment to use == | ||
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafesr, and for boron pre-deposition (doping) and for drive-in afterwards'' | |||
*[[/C2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - ''For gate oxide growing on new wafers'' | |||
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep'' | |||
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers'' | |||
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace(C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers'' | |||
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers'' | |||
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For oxidation and annealing of wafers containing aluminium'' | |||
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers'' | |||
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers'' | |||
*[[/Jipelec RTP|Jipelec RTP]] - ''For rapid thermal annealing of III-V materials and Si based materials'' | |||
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying'' | |||
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis furnace]] - ''For pyrolysis of different resist layers'' | |||
==Comparison of the six oxidation furnaces== | ==Comparison of the six oxidation furnaces== | ||