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Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions

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| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''A2 <br />Gate oxide'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| valign="top" align="center" style="background:#f0f0f0;"|'''D1 <br />APOX'''
| valign="top" align="center" style="background:#f0f0f0;"|'''D1 <br />APOX'''
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|-
|-
!Wet oxidation with bubbler (water steam + N<sub>2</sub>)
!Wet oxidation with bubbler (water steam + N<sub>2</sub>)
|.||.||x||x (with special permission)||x||x||.
|.||.||x||.||x||x||.
|-
|-
!Process temperature [ <sup>o</sup>C ]
!Process temperature [ <sup>o</sup>C ]
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|-valign="top"
|-valign="top"
! Batch size
! Batch size
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4"||?
|max. 30 wafers of 4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 wafers of 6",4" or 2"||max. 30 4" wafers or 2" wafers||max. 30 4" wafers or 2" wafers||max. 200 4"|| max. 30 wafers
|-valign="top"
|-valign="top"
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:  
!style="background:#f0f0f0;"|Which wafers are allowed to enter the furnace:  
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| align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| align="center" style="background:#f0f0f0;"|'''A3 <br />Phosphorous drive-in'''
| align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| align="center" style="background:#f0f0f0;"|'''C1 <br />Anneal oxide'''
| align="center" style="background:#f0f0f0;"|'''C2 <br />Gate oxide'''
| align="center" style="background:#f0f0f0;"|'''A2 <br />Gate oxide'''
| align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| align="center" style="background:#f0f0f0;"|'''C3 <br />Anneal bond'''
| align="center" style="background:#f0f0f0;"|'''D1 <br />APOX'''
| align="center" style="background:#f0f0f0;"|'''D1 <br />APOX'''
| align="center" style="background:#f0f0f0;"|'''Noble'''
| align="center" style="background:#f0f0f0;"|'''Noble'''
|-
|-
| New clean* Si wafers 4" (6" in C1)||x||x||x||x (with special permission)||x||x||x
| RCA clean* Si wafers with no history of Metals on||x||x||x||x (with special permission)||x||.||x
|-
|-
| RCA clean** Si wafers with no history of Metals on||x||x||x||x (with special permission)||x||.||x
| From Predep furnace  directly (e.g. incl. Predep HF*)||From A2||From A4||x||.||x||.||x
|-
| From Predep furnace  directly (e.g. incl. Predep HF**)||From A2||From A4||x||.||x||.||x
|-
|-
| Wafers directly from PECVD1||.||.||x||.||x||.||x
| Wafers directly from PECVD1||.||.||x||.||x||.||x
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|}
|}


<nowiki>*</nowiki>New clean: only right from the new clean box. It is not allowed to put them in another box first.
<nowiki>*</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.
 
<nowiki>**</nowiki>These wafers must be placed in a "transport box from RCA to furnace" using the RCA carrier when doing RCA or the pre-dep carrier after pre-dep.


==Oxidation curves==
==Oxidation curves==
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