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Specific Process Knowledge/Etch/KOH Etch: Difference between revisions

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Key facts for the different etch baths available at Danchip are resumed in the table:
==Quality Control (QC) for the KOH baths.==
 
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for KOH1, KOH2 and KOH3'''
|-
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1565&mach=248 The QC procedure for KOH2 and KOH3]<br>
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=3203&mach=9 The QC procedure for KOH1]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=19 The newest QC data for KOH2]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
 
! QC Recipe:
!
|-
| Solution
|28 wt% KOH
|-
|Temperature
|80°C
|-
|Time
|90 min
|-
|Substrate
|Si (100)
|-|-
|Masking
|No masking
|-
|}
| align="center" valign="top"|
{| border="3" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!KOH1
!KOH 2&3
|-
|Etch rate in Si
|1.3 ± 0.1 µm/min
|1.29 ± 0.06 µm/min
|-
|Roughness
| not measured
|< 80 nm
|-
|Nonuniformity
|< 3%
|< 3%
|-
|}
|-
|}
|}


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==KOH etching baths==
==KOH etching baths==
 
Key facts for the different etch baths available at Danchip are resumed in the table:
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