Specific Process Knowledge/Bonding: Difference between revisions

Revision as of 12:36, 25 November 2013

.	Eutectic bonding	Fusion bonding	Anodic bonding
General description	For bonding two substrates by use of an interphase that makes an eutecticum.	For bonding two identical materials.	For bonding Si and Glass.
Bonding temperature	Depending on the eutecticum 310°C to 400°C .	Depending on defects 50°C to 400°C .	Depending on the voltage 300°C to 500°C Standard is 400°C .
Annnealing temperature	No annealing	1000°C in the bond furnace C3	No annealing
Materials possible to bond	Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni	Si/Si, SiO $_{2}$ /SiO $_{2}$	Si/Pyrex (glass)
Substrate size	Up to 6" (aligning only possible for 4" and 6")	Up to 6" (aligning only possible for 4" and 6")	Up to 6" (aligning only possible for 4" and 6")
Cleaning	Cleaning by N2.	Wet chemical cleaning, IMEC.	Cleaning by N2.
IR alignment	Double side polished wafers.	Double side polished wafers.	Not relevant.

@@ Line 18: / Line 18: @@
 |-valign="top"
 |'''Bonding temperature'''
-|Depending on the eutecticum 310<math>^o</math>C to 400<math>^o</math>C.
+|Depending on the eutecticum 310°C  to 400°C .
-|Depending on defects 50<math>^o</math>C to 400<math>^o</math>C.
+|Depending on defects 50°C  to 400°C .
-|Depending on the voltage 300<math>^o</math>C to 500<math>^o</math>C Standard is 400<math>^o</math>C.
+|Depending on the voltage 300°C to 500°C  Standard is 400°C .
 |-valign="top"
 |'''Annnealing temperature'''
 |No annealing
-|1000<math>^o</math>C in the bond furnace C3
+|1000°C  in the bond furnace C3
 |No annealing
 |-valign="top"