Specific Process Knowledge/Lithography/NanoImprintLithography: Difference between revisions
| Line 14: | Line 14: | ||
<br clear="all" /> | <br clear="all" /> | ||
==Process information== | |||
====Types of Bonding==== | |||
*[[Specific Process Knowledge/Bonding/Eutectic bonding|Eutectic bonding]] | |||
*[[Specific Process Knowledge/Bonding/Fusion bonding|Fusion bonding]] | |||
*[[Specific Process Knowledge/Bonding/Anodic bonding|Anodic bonding]] | |||
====Imprint information==== | |||
*[[Specific Process Knowledge/Imprinting|Imprinting]] | |||
<br clear="all" /> | |||
==Overview of the performance of the EVG NIL and some process related parameters== | |||
{| border="2" cellspacing="0" cellpadding="10" | |||
|- | |||
!style="background:silver; color:black;" align="left"|Purpose | |||
|style="background:LightGrey; color:black"|Imprint and bonding | |||
|style="background:WhiteSmoke; color:black"| | |||
*Eutectic bonding | |||
*Fusion bonding | |||
*Anodic bonding | |||
*Imprinting | |||
|- | |||
!style="background:silver; color:black" align="left"|Performance | |||
|style="background:LightGrey; color:black"|Alignment accuracy | |||
|style="background:WhiteSmoke; color:black"| | |||
*± 5 microns for IR alignment | |||
*± 10 microns for backside alignment | |||
|- | |||
|- | |||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*Room temperature to 500<math>\rm{^o}</math>C | |||
|- | |||
|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*~5<math>\cdot</math>10<sup>-4</sup>mbar - 2000mbar | |||
|- | |||
|style="background:LightGrey; color:black"|Piston Force | |||
|style="background:WhiteSmoke; color:black"| | |||
*Depending on the area, for 4" wafers 200-20000N. | |||
|- | |||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*One 4" or 6" wafer per run | |||
*Pieces are only allowed with speciel permission | |||
|- | |||
| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon wafers | |||
*Quartz wafers | |||
*Pyrex wafers | |||
|- | |||
| style="background:LightGrey; color:black"|Material allowed on the substrate | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Poly Silicon | |||
*Photoresist | |||
*PMMA | |||
*TOPAS | |||
*SU-8 | |||
*Metals: Au, Sn, Ag, Al, Ti. | |||
|- | |||
|} | |||