Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
==Etching of SU-8 [[Image:section under construction.jpg|70px]]== | ==Etching of SU-8 [[Image:section under construction.jpg|70px]]== | ||
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of | SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of patterns defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | ||
* High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | * High anisotropic etch: etch rate ~400nm/min, anisotropy ~0.8 | ||