Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
m Khara moved page Etching of TOPAS to Specific Process Knowledge/Etch/Etching of TOPAS: That is the right place |
No edit summary |
||
| Line 1: | Line 1: | ||
==Etching of TOPAS== | ==Etching of TOPAS [[Image:section under construction.jpg|70px]]== | ||
TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer. | TOPAS is etched by an oxygen plasma in the ASE. Masking of TOPAS was achieved by photo resist or a hard mask of aluminum or silicon. Photo resist is the preferred masking material, since hard masks tends to introduce local masking due to redeposition. TOPAS can be etched at rates up to 500 nm/min, with excellent uniformity over the wafer. | ||