Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions
m Khara moved page Etching of SU-8 to Specific Process Knowledge/Etch/Etching of SU-8: This is the right place |
No edit summary |
||
| Line 1: | Line 1: | ||
==Etching of SU-8== | ==Etching of SU-8 [[Image:section under construction.jpg|70px]]== | ||
SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | SU-8 can be etched by a oxygen plasma with a small amount of SF<sub>6</sub> to remove the antimony present from the photo initiator. Etching of SU-8 has been developed on the ASE and was tested as a mask less reduction of pattern defined by photo lithography. Two processes are available, a high and a low anisotropic etch for use as etching or thinning of structures. | ||