Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions
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==Under etching and local masking== | ==Under etching and local masking== | ||
{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! Silicon hard mask | ! Silicon hard mask | ||
! Aluminum hard mask | |||
|- | |- | ||
|[[Image:TOPAS-Si-hard-mask_U50.jpg|200x200px]] | |[[Image:TOPAS-Si-hard-mask_U50.jpg|200x200px]] | ||
|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | |[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]] | ||
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|Etch broke through the photo resist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects. | |style="width:200px" Etch broke through the photo resist layer, and sputtered silicon have redeposited on the polymer surface, introducing local masking effects. | ||
|The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | |The aluminum hard mask has been etched in the resist developer introducing poor edge definition even though the resist was not completely removed by the etch. | ||
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