Specific Process Knowledge/Etch/Etching of TOPAS: Difference between revisions

@@ Line 40: / Line 40: @@
 | 0.98
 | 0.95
+|}
+==Under etching and local masking==
+{| border="1" cellspacing="1" cellpadding="2"  align="left"
+! Silicon hard mask
+! Aluminum hard mask
+|-
+|[[Image:TOPAS-Si-hard-mask_U50.jpg|200x200px]]
+|[[Image:TOPAS-Al-hard-mask_U33.jpg|200x200px]]
+|-
+|Etch
+*O<sub>2</sub> flow [sccm]:50
+*CO<sub>2</sub> flow [sccm]:50
+*Pressure [mTorr]:40
+*Coil power [W]:800
+*Platen power [W]:60
+*Temperature [°C]:20
+|Etch
+*O<sub>2</sub> flow [sccm]:50
+*SF<sub>6</sub> flow [sccm]:50
+*Pressure [mTorr]:40
+*Coil power [W]:800
+*Platen power [W]:60
+*Temperature [°C]:20
 |}