Specific Process Knowledge/Etch/Etching of SU-8: Difference between revisions
| Line 13: | Line 13: | ||
|- | |- | ||
! Parameter | ! Parameter | ||
! SU8aniso etch | |||
! SU8iso | |||
|- | |- | ||
! O<sub>2</sub> (sccm) | ! O<sub>2</sub> (sccm) | ||
| 99 | |||
| 99 | | 99 | ||
|- | |- | ||
! SF<sub>6</sub> (sccm) | ! SF<sub>6</sub> (sccm) | ||
| 17 | | 17 | ||
| 14 | |||
|- | |- | ||
! Pressure (mTorr) | ! Pressure (mTorr) | ||
| 40 | | 40 | ||
| 20 | |||
|- | |- | ||
! Coil power (W) | ! Coil power (W) | ||
| 800 | |||
| 800 | | 800 | ||
|- | |- | ||
! Platen power (W) | ! Platen power (W) | ||
| 30 | | 30 | ||
| 0 | |||
|- | |- | ||
! Temperature (<sup>o</sup>C) | ! Temperature (<sup>o</sup>C) | ||
| 30 | | 30 | ||
| 10 | |||
|- | |- | ||
! Etch rate (nm/min) | ! Etch rate (nm/min) | ||
| ~400 | | ~400 | ||
| ~170 | |||
|- | |- | ||
!anisotropy | !anisotropy | ||
|~0.8 | | ~0.8 | ||
| ~0.3 | |||
|- | |- | ||
!Sb in surface layer (%) | !Sb in surface layer (%) | ||
|<2 | | <2 | ||
| <2.75 | |||
|} | |} | ||
===SU8iso | ===SU8iso=== | ||