Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ/Nanoetch: Difference between revisions
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
'''Feedback to this page: | |||
[mailto:plasma@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/FAQ/Nanoetch click here]''' | |||
; Question | ; Question | ||
: One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch? | : One of our 'popular' etches on the old ASE, a switched etch of nanostructures , is proving very difficult to transfer to the Pegasus. The structures are typically e-beam defined channels or holes a few hundred nanometers wide and masked with 50-100 nm ZEP resist. The etch load is usually very low, less than a few percent. We would like to go as much as 1 µm down. (I have been on paternity leave during the summer and I am sitting at home with my son right now so I don't have/know the complete story but I will get it for you if needed.) Do you have a suggestion to a starting point for such an etch? | ||