Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ/Masks: Difference between revisions
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: I remember you said that you don't like Al as masking material because it will get sputtered off (am I right?) - but what about ALD deposited aluminium oxide - it is, as far as I know, much harder and resistant than Al..? | : I remember you said that you don't like Al as masking material because it will get sputtered off (am I right?) - but what about ALD deposited aluminium oxide - it is, as far as I know, much harder and resistant than Al..? | ||
Revision as of 11:08, 22 October 2013
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- Question 1
- I remember you said that you don't like Al as masking material because it will get sputtered off (am I right?) - but what about ALD deposited aluminium oxide - it is, as far as I know, much harder and resistant than Al..?
- Answer 1
- We don't have experience with ALD deposited aluminium oxide as a mask, however for some ESC configurations we have seen evidence of sputtering of the alumina uniformity shield surrounding the wafer; this would lead me to believe that the ALD aluminium oxide could still sputter and cause contamination issues.
Source: Kerry Roberts, SPTS