Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions
No edit summary |
|||
Line 1: | Line 1: | ||
'''Feedback to this page: | |||
[mailto:plasma@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/StandardRecipes click here]''' | |||
== Overview of the standard processes: Processes A, B, C, D and SOI == | == Overview of the standard processes: Processes A, B, C, D and SOI == | ||
Revision as of 11:01, 22 October 2013
Feedback to this page: click here
Overview of the standard processes: Processes A, B, C, D and SOI
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
Process name | Type | Purpose | Conditions during original runs | Best usage | |||
---|---|---|---|---|---|---|---|
Feature | Mask material | Etch load | Comments | ||||
Process A | Bosch | Fast etch | 80 µm trench | Photo resist | 12-13 % on 6" wafer | ||
Process B | Bosch | Fast etch | 30 µm diameter via | Photo resist | 12-13 % on 6" wafer |
Equipment | Equipment 1 | Equipment 2 | |
---|---|---|---|
Purpose |
|
| |
Performance | Response 1 |
|
|
Response 2 |
|
| |
Process parameter range | Parameter 1 |
|
|
Parameter 2 |
|
| |
Substrates | Batch size |
|
|
Allowed materials |
|
|