Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions

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			'''Feedback to this page''': '''[mailto:wetchemistry@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Wafer_cleaning/cleaning_with_HF click here]'''


	Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.		Is in use during the RCA procedure. This bath must only be used in the RCA procedure or to remove native oxide on new wafers from the box. See the [[Specific Process Knowledge/Wafer cleaning/RCA\|RCA]] page for further details or the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)\|oxide etch]] page.