Specific Process Knowledge/Characterization: Difference between revisions
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===[[/4-Point Probe|4-Point Probe]]=== | ===[[/4-Point Probe|4-Point Probe]]=== | ||
===[[/Thickness Measurer|Thickness Measurer]]=== | ===[[/Thickness Measurer|Thickness Measurer]]=== | ||
===[[/Probe station|Probe station]]=== | ===[[/Probe station|Probe station]]=== ''writer:Jan'' | ||
Revision as of 09:19, 7 January 2008
Choose topic
- Sample imaging
- Topographic measurement
- Stress measurement
- Measurement of film thickness and optical constants
- Wafer thickness measurement
- Element analysis
- Hydrophobicity measurement
- Resistivity measurement
- Other electrical measurements
Choose equipment
SEM: Scanning Electron Microscopy
AFM: Atomic Force Microscopy
Profiler
Optical microscope
Optical characterization
SIMS: Secondary Ion Mass Spectrometry
Drop Shape Analyzer
4-Point Probe
Thickness Measurer
===Probe station=== writer:Jan