Specific Process Knowledge/Thin film deposition: Difference between revisions

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*[[/Hummer|Hummer]] - ''Gold sputtering system''
*[[/Hummer|Hummer]] - ''Gold sputtering system''
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[[/Deposition of Silicon|Silicon]]
*[[/Furnace LPCVD Nitride|Furnace LPCVD Nitride (4" and 6")]] - ''Deposition of silicon nitride''
*[[/Furnace LPCVD PolySilicon|Furnace LPCVD Polysilicon (4" and 6")]] - ''Deposition of polysilicon''
*[[/Furnace LPCVD TEOS|Furnace LPCVD TEOS (4")]] - ''Deposition of silicon oxide''
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[[/Deposition of Aluminium|Aluminium]] <br/>
[[/Deposition of Aluminium|Aluminium]] <br/>

Revision as of 09:55, 15 October 2013

3rd Level - Material/Methode

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Choose material to deposit

Dielectrica

Metals/elements

Period/Group

IVB VB VIB VIIIB IB IIIA IVA
3 . . . . . 13 Al Aluminium 14 Si Silicon
4 22 Ti Titanium . 24 Cr Chromium 28 Ni Nickel 29 Cu Copper . 32 Ge Germanium
5 . . 42 Mo Molybdenum 46 Pd Palladium 47 Ag Silver . 50 Sn Tin
6 . 73 Ta Tantalum 74 W Tungsten 78 Pt Platinum 79 Au Gold . .

Alloys


Polymers

  • SU8
  • Antistiction coating
  • Topas
  • PMMA

Choose deposition equipment


Section under construction

Dielectrica Semicondutors Metals Alloys Polymers

Silicon Nitride - and oxynitride
Silicon Oxide
Titanium Oxide

Silicon

Aluminium
Titanium
Chromium
Nickel
Copper
Germanium
Molybdenum
Palladium
Silver
Tin
Tantalum
Tungsten
Platinum
Gold

TiW alloy (10%/90% by weight)
NiCr alloy
AlTi alloy

SU8
Antistiction coating
Topas
PMMA


PVD LPCVD PECVD Coaters Others

Aluminium
Titanium
Chromium
Nickel
Copper
Germanium
Molybdenum
Palladium
Silver
Tin
Tantalum
Tungsten
Platinum
Gold

TiW alloy (10%/90% by weight)
NiCr alloy
AlTi alloy

SU8
Antistiction coating
Topas
PMMA