Specific Process Knowledge/Etch: Difference between revisions
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[[/ | *[[/RIE (Reactive Ion Etch)|RIE (Reactive Ion Etch)]] | ||
[[/ | *[[/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]] | ||
[[/ | *[[/AOE (Advanced Oxide Etch)|AOE (Advanced Oxide Etch)]] | ||
*[[/DRIE-Pegasus|DRIE-Pegasus (Silicon Etch)]] | |||
*[[/ICP Metal Etcher|ICP Metal Etch]] | |||
*[[/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]] | |||
*[[/Comparison|Comparison of the dry etch systems at Danchip]] | |||
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[[/ | *[[/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
*[[/Wet Silicon Oxide Etch (BHF)|Wet Silicon Oxide Etch (BHF)]] | |||
[[/ | *[[/KOH Etch|KOH Etch]] - ''Anisotropic silicon etch'' | ||
[[/ | *[[/Wet Polysilicon Etch|Wet Polysilicon Etch]] - ''Isotropic silicon etch'' | ||
[[/ | *[[/Wet Aluminium Etch|Wet Aluminium Etch]] | ||
[[/ | *[[/Wet Chromium Etch|Wet Chromium Etch]] | ||
[[/ | *[[/Wet Titanium Etch|Wet Titanium Etch]] | ||
[[/ | *[[/Wet Gold Etch|Wet Gold Etch]] | ||
[[/ | *[[/Wet Platinum Etch|Wet Platinum Etch]] | ||
[[/ | |||
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