Specific Process Knowledge/Thin film deposition

3rd Level - Material/Methode

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Choose material to deposit

Dielectrica

• Silicon Nitride - Silicon nitride and silicon oxynitride
• Silicon Oxide
• Titanium Oxide

Metals/elements

Period/Group	IVB	VB	VIB	VIIIB	IB	IIIA	IVA
3	.	.	.	.	.	13 Al Aluminium	14 Si Silicon
4	22 Ti Titanium	.	24 Cr Chromium	28 Ni Nickel	29 Cu Copper	.	32 Ge Germanium
5	.	.	42 Mo Molybdenum	46 Pd Palladium	47 Ag Silver	.	50 Sn Tin
6	.	73 Ta Tantalum	74 W Tungsten	78 Pt Platinum	79 Au Gold	.	.

Alloys

• TiW alloy (10%/90% by weight)
• NiCr alloy
• AlTi alloy

Polymers

• SU8
• Antistiction coating
• Topas
• PMMA

Choose deposition equipment

• Alcatel - E-beam evaporator and sputter tool
• Lesker - Sputter tool
• PVD co-sputter/evaporation - E-beam evaporator and multiple wafer tool
• Wordentec - E-beam evaporator, sputter and thermal evaporator
• Physimeca - E-beam evaporator (III-V lab)
• IBE/IBSD Ionfab 300 - Sputter deposition of high quality optical layers and milling/etching
• Hummer - Gold sputtering system
• PECVD - Plasma Enhanced Chemical Vapor deposition
• Furnace LPCVD Nitride (4" and 6") - Deposition of silicon nitride
• Furnace LPCVD Polysilicon (4" and 6") - Deposition of polysilicon
• Furnace LPCVD TEOS (4") - Deposition of silicon oxide
• MVD - Molecular Vapor Deposition
• Black Magic PECVD - Black Magic PECVD (Carbon)
• Electroplating-Ni - Electrochemical deposition of nickel

Section under construction

Dielectrica	Semicondutors	Metals	Alloys	Polymers
Silicon Nitride - and oxynitride Silicon Oxide Titanium Oxide	Silicon	Aluminium Titanium Chromium Nickel Copper Germanium Molybdenum Palladium Silver Tin Tantalum Tungsten Platinum Gold	TiW alloy (10%/90% by weight) NiCr alloy AlTi alloy	SU8 Antistiction coating Topas PMMA